Cost-efficient fabrication of UV/Vis nanowire (NW) photodiodes enabled by ZnO/Si radial heterojunction
- Authors
- Um, Han Don; Park, Kwang Tae; Jung, Jin Young; Jee, Sang Won; Moiz, Syed Abdul; Ahn, Cheol Hyoun; Cho, Hyung Koun; Lee, Eunsonyi; Kim, Dong Wook; Park, Yun Chang; Yang, Jun Mo; Lim, Sung Kyu; Lee, Jung Ho
- Issue Date
- 2010
- Publisher
- IEEE
- Citation
- Technical Digest - International Electron Devices Meeting, IEDM, pp.9.5.1 - 9.5.4
- Indexed
- SCOPUS
- Journal Title
- Technical Digest - International Electron Devices Meeting, IEDM
- Start Page
- 9.5.1
- End Page
- 9.5.4
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/40471
- DOI
- 10.1109/IEDM.2010.5703330
- ISSN
- 0163-1918
- Abstract
- Radial heterojunction nanowires (NWs) using a ZnO(shell)/Si(core) coaxial structure are for the first time reported for a novel photodiode application. Strong antireflective characteristics are shown by employing vertically aligned Si NW arrays. A thin ZnO shell deposited onto a Si NW formed a radial junction which enabled effective separation of charge carriers. Furthermore, a ZnO nanostructure demonstrates a very high internal gain in photoconductivity due to the surface-enhanced electron-hole separation. The photodetection range, either ultraviolet (UV) or visible, can be determined by applying forward or reverse bias, respectively. Compared to a planar heterojunction photodiode, a photoresponsivity of the radial heterojunction structure shows similar values despite only ∼20% consumption of a ZnO thickness required for a planar junction. In addition, ∼2.5 times increase in UV responsivity is also presented using the radial heterojunction structure under the ZnO thickness same as a planar counterpart. Our coaxial ZnO/Si NW photodetectors suggest bright prospect for enhancing a photoresponsivity while less consuming ZnO via controlling the wired nanostructure. ©2010 IEEE.
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