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Frequency dependence in RF gain resonance by negative photocurrent resistance of electroabsorption modulator
- Authors
- Shin, Dong Soo
- Issue Date
- Dec-2009
- Publisher
- IEEE
- Citation
- Proceedings - 2010 IEEE International Topical Meeting on Microwave Photonics, MWP 2010, pp 118 - 120
- Pages
- 3
- Indexed
- SCOPUS
- Journal Title
- Proceedings - 2010 IEEE International Topical Meeting on Microwave Photonics, MWP 2010
- Start Page
- 118
- End Page
- 120
- ISSN
- 0000-0000
- Abstract
- Negative differential photocurrent resistance of the electroabsorption modulator can enhance the RF gain by inducing 'resonance' in the voltage drop across the junction at very high optical power. In this paper, it is examined that the maximum RF gain value enhanced by the negative photocurrent resistance reduces as the modulation frequency is increased. For the modulator capacitance of 1 pF, as the frequency is increased from 0.5 to 1.0 and 2.0 GHz, the maximum RF gain is reduced from 21 to 15 and 9 dB, respectively. ©2010 IEEE.
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Related Researcher
- Shin, Dong Soo
- ERICA 첨단융합대학 (ERICA 반도체·디스플레이공학전공)