n-ZnO:Ga/i-ZnO/p-Si heterojunction light emitting diodes fabricated on patterned Si substrates
- Authors
- Choi, Mi Kyung; Han, Won Suk; Kim, Young Yi; Kong, Bo Hyun; Cho, Hyung Koun; Kim, Jae Hyun; Seo, Hong-Seok; Kim, Kang-Pil; Lee, Jung-Ho
- Issue Date
- Dec-2009
- Publisher
- Kluwer Academic Publishers
- Keywords
- EPITAXY; TEMPERATURE
- Citation
- Journal of Materials Science: Materials in Electronics, v.20, no.12, pp.1214 - 1218
- Indexed
- SCIE
SCOPUS
- Journal Title
- Journal of Materials Science: Materials in Electronics
- Volume
- 20
- Number
- 12
- Start Page
- 1214
- End Page
- 1218
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/40632
- DOI
- 10.1007/s10854-009-9854-y
- ISSN
- 0957-4522
- Abstract
- n-ZnO:Ga/i-ZnO/p-Si heterojunction light-emitting diodes were fabricated on patterned Si substrates with increased interface area where hole carriers were transported to the i-ZnO layer. The patterned Si substrates were prepared by electrochemical etching, and the n-type ZnO:Ga films were deposited by high-temperature sputtering. In the patterned LED, the lower breakdown and greater leakage current under a reverse bias was attributed to the formation of a high density of grain boundaries and random tilting of the c-axis. Compared to an LED without patterning, the patterned substrates resulted in approximately 75% improvement in the output power of visible emission, which was attributed to a 1.33-fold increase in the heterojunction area and the increase in grain boundary density due to grain tilting.
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