A novel approach for scratch detection and study on dependency of scratches during oxide CMP
- Authors
- Kim, In-Gon; Kim, In-Kwon; Prasad, Y. Nagendra; Park, Jin-Goo
- Issue Date
- Nov-2009
- Publisher
- Japan planarization and CMP technical committee
- Keywords
- Oxide CMP; Defect detection; Post CMP cleaning HF decoration; PRE
- Citation
- 2009 ICPT, pp.307 - 312
- Indexed
- OTHER
- Journal Title
- 2009 ICPT
- Start Page
- 307
- End Page
- 312
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/40653
- Abstract
- Oxide CMP process has been well accepted for the planarization of the dielectric oxide film and becomes a critical process in ULSI manufacturing due to the rapid shrinkage of the design rule for
the device [1]. But CMP process generates defects inevitably such as micro-scratch, pit, and polishing residue. As the design rule becomes smaller and smaller, the formation of micro-scratches cause severe circuit failure, the reduction of durability and reliability and also the increase of current leakage in semiconductor [2]. It is important to develop post CMP cleaning process to have effective detection of scratches since they are not easy to detect on flat and broad oxide surfaces [3]. In this study, a new method was proposed to detect the scratches and also the dependency of these scratches on process parameters such as pressure, slurry concentration and type of conditioner was examined.
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Collections - COLLEGE OF ENGINEERING SCIENCES > DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING > 1. Journal Articles
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