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Fully integrated 3 x 3 mm BiFET stage-bypass power amplifier for WCDMA handset application
- Issue Date
- Oct-2009
- Publisher
- INST ENGINEERING TECHNOLOGY-IET
- Citation
- ELECTRONICS LETTERS, v.45, no.22, pp.1125 - 1126
- Indexed
- SCIE
SCOPUS
- Journal Title
- ELECTRONICS LETTERS
- Volume
- 45
- Number
- 22
- Start Page
- 1125
- End Page
- 1126
- ISSN
- 0013-5194
- Abstract
- By using a merged process of a heterojunction bipolar transistor and a field effect transistor (BiFET), a stage-bypass power amplifier (PA) for wideband code division multiple access (WCDMA) application has been developed. The size of the PA was reduced by integrating control logic circuits on a single BiFET monolithic microwave integrated circuit with virtually identical performance compared to a previous work. Adopting the stage-bypass technique, this work accomplished remarkable average current reduction compared to a typical class-AB PA, thus contributing to extended operation time.
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Related Researcher
- KIM, JUNG HYUN
- ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)