Fully integrated 3 x 3 mm BiFET stage-bypass power amplifier for WCDMA handset application
- Authors
- Jung, J.; Kim, J.
- Issue Date
- Oct-2009
- Publisher
- INST ENGINEERING TECHNOLOGY-IET
- Citation
- ELECTRONICS LETTERS, v.45, no.22, pp.1125 - 1126
- Indexed
- SCIE
SCOPUS
- Journal Title
- ELECTRONICS LETTERS
- Volume
- 45
- Number
- 22
- Start Page
- 1125
- End Page
- 1126
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/40783
- DOI
- 10.1049/el.2009.2111
- ISSN
- 0013-5194
- Abstract
- By using a merged process of a heterojunction bipolar transistor and a field effect transistor (BiFET), a stage-bypass power amplifier (PA) for wideband code division multiple access (WCDMA) application has been developed. The size of the PA was reduced by integrating control logic circuits on a single BiFET monolithic microwave integrated circuit with virtually identical performance compared to a previous work. Adopting the stage-bypass technique, this work accomplished remarkable average current reduction compared to a typical class-AB PA, thus contributing to extended operation time.
- Files in This Item
-
Go to Link
- Appears in
Collections - COLLEGE OF ENGINEERING SCIENCES > SCHOOL OF ELECTRICAL ENGINEERING > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/40783)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.