Strong photoluminescence at 1.53 mu m from GaSb/AlGaSb multiple quantum wells grown on Si substrate
- Authors
- Nguyen, D. H.; Park, J.; Noh, Y. K.; Kim, M. D.; Lee, D.; Oh, J. E.
- Issue Date
- Aug-2009
- Publisher
- AMER INST PHYSICS
- Keywords
- aluminium compounds; carrier lifetime; dislocations; electronic density of states; gallium compounds; III-V semiconductors; photoluminescence; semiconductor quantum dots; semiconductor quantum wells
- Citation
- APPLIED PHYSICS LETTERS, v.95, no.6
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 95
- Number
- 6
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/40967
- DOI
- 10.1063/1.3205473
- ISSN
- 0003-6951
- Abstract
- Strong photoluminescence at 1.53 mu m was obtained from a GaSb/Al0.4Ga0.6Sb multiple-quantum-well sample grown on Si substrate, indicating greatly reduced defects by InSb quantum-dot layers that terminate dislocations. The carrier lifetime of 1.4 ns, comparable to typical InP-based quantum wells, and its independence on excitation power indicates the low defect density. Due to the wide well width and tensile strain, photoluminescence was dominated by the light hole-electron transition at low temperature. However, the heavy hole-electron transition was dominant at room temperature due to the proximity of energy levels and higher density of states for the heavy hole transition.
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