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Electrical properties of atomic-layer-deposited La2O3 films using a novel La formamidinate precursor and ozone
- Authors
- Lee, Bongki; Park, Tae-joo; Hande, Abhiman; Kim, Moonje; Wallace, Robert M.; Kim, Jiyoung; Liu, Xinye; Yi, Jae-Hwan; Li, Huazhi; Rousseau, Mike; Shenai, Deo Vinayak; Suydam, J.
- Issue Date
- Jul-2009
- Publisher
- Elsevier BV
- Keywords
- Atomic layer deposition (ALD); La formamidinate precursors; Ozone; La2O3; High-k gate dielectrics
- Citation
- Microelectronic Engineering, v.86, no.7-9, pp.1658 - 1661
- Indexed
- SCOPUS
- Journal Title
- Microelectronic Engineering
- Volume
- 86
- Number
- 7-9
- Start Page
- 1658
- End Page
- 1661
- ISSN
- 0167-9317
- Abstract
- La2O3 films were grown by atomic layer deposition technique using a novel formannidinate precursor, tris(N,N'-diisopropylformamidinato) lanthanum [La((i)PrfAMD)(3)], with H2O and O-3 as an oxidant. La2O3 films grown with H2O in the film exhibited a parasitic chemical vapor deposition type growth possibly due to a La(OH)(x) component. However, the use of O-3 as the oxidant revealed a stable ALD process window. A post-deposition annealing (PDA) of the deposited La2O3 films using O-3 significantly reduces leakage current density by four orders of magnitude relative to as-deposited samples. The dielectric constant of La2O3 films with a TaN metal gate is found to be similar to 29, which is higher than reported values for CVD and ALD La2O3 films. (C) 2009 Elsevier B.V. All rights reserved.
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Related Researcher
- Park, Tae Joo
- ERICA 공학대학 (DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING)