Low-Temperature-Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High-Density Non-volatile Memory
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Myoung-Jae | - |
dc.contributor.author | Kim, Sun I. | - |
dc.contributor.author | Lee, Chang B. | - |
dc.contributor.author | Yin, Huaxiang | - |
dc.contributor.author | Ahn, Seung-Eon | - |
dc.contributor.author | Kang, Bo S. | - |
dc.contributor.author | Kim, Ki H. | - |
dc.contributor.author | Park, Jae C. | - |
dc.contributor.author | Kim, Chang J. | - |
dc.contributor.author | Song, Ihun | - |
dc.contributor.author | Kim, Sang W. | - |
dc.contributor.author | Stefanovich, Genrikh | - |
dc.contributor.author | Lee, Jung H. | - |
dc.contributor.author | Chung, Seok J. | - |
dc.contributor.author | Kim, Yeon H. | - |
dc.contributor.author | Park, Youngsoo | - |
dc.date.accessioned | 2021-06-23T15:38:28Z | - |
dc.date.available | 2021-06-23T15:38:28Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2009-05 | - |
dc.identifier.issn | 1616-301X | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/41195 | - |
dc.description.abstract | An effective stacked memory concept utilizing all-oxide-based device components for future high-density nonvolatile stacked structure data storage is developed. GaInZnO (GIZO) thin-film transistors, grown at room temperature, are integrated with one-diode (CuO/InZnO)-one-resistor (NiO) (1D-1R) structure oxide storage node elements, fabricated at room temperature. The low growth temperatures and fabrication methods introduced in this paper allow the demonstration of a stackable memory array as well as integrated device characteristics. Benefits provided by low-temperature processes are demonstrated by fabrication of working devices over glass substrates. Here, the device characteristics of each individual component as well as the characteristics of a combined select transistor with a 1D-1R cell are reported. X-ray photoelectron spectroscopy analysis of a NiO resistance layer deposited by sputter and atomic layer deposition confirms the importance of metallic Ni content in NiO for bi-stable resistance switching. The GIZO transistor shows a field-effect mobility of 30 cm(2) V-1 s(-1), a V-th of +1.2V, and a drain current on/off ratio of up to 10(8), while the CuO/InZnO heterojunction oxide diode has forward current densities of 2 x 10(4) A cm(-2). Both of these materials show the performance of state-of-the-art oxide devices. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | WILEY-V C H VERLAG GMBH | - |
dc.title | Low-Temperature-Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High-Density Non-volatile Memory | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kang, Bo S. | - |
dc.identifier.doi | 10.1002/adfm.200801032 | - |
dc.identifier.scopusid | 2-s2.0-66449128301 | - |
dc.identifier.wosid | 000266626100010 | - |
dc.identifier.bibliographicCitation | ADVANCED FUNCTIONAL MATERIALS, v.19, no.10, pp.1587 - 1593 | - |
dc.relation.isPartOf | ADVANCED FUNCTIONAL MATERIALS | - |
dc.citation.title | ADVANCED FUNCTIONAL MATERIALS | - |
dc.citation.volume | 19 | - |
dc.citation.number | 10 | - |
dc.citation.startPage | 1587 | - |
dc.citation.endPage | 1593 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Physical | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | HIGH-SPEED | - |
dc.subject.keywordAuthor | HIGH-SPEED | - |
dc.subject.keywordAuthor | NIO FILMS | - |
dc.subject.keywordAuthor | SWITCH | - |
dc.identifier.url | https://onlinelibrary.wiley.com/doi/10.1002/adfm.200801032 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
55 Hanyangdeahak-ro, Sangnok-gu, Ansan, Gyeonggi-do, 15588, Korea+82-31-400-4269 sweetbrain@hanyang.ac.kr
COPYRIGHT © 2021 HANYANG UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.