Low-Temperature-Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High-Density Non-volatile Memory
- Authors
- Lee, Myoung-Jae; Kim, Sun I.; Lee, Chang B.; Yin, Huaxiang; Ahn, Seung-Eon; Kang, Bo S.; Kim, Ki H.; Park, Jae C.; Kim, Chang J.; Song, Ihun; Kim, Sang W.; Stefanovich, Genrikh; Lee, Jung H.; Chung, Seok J.; Kim, Yeon H.; Park, Youngsoo
- Issue Date
- May-2009
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- HIGH-SPEED; NIO FILMS; SWITCH
- Citation
- ADVANCED FUNCTIONAL MATERIALS, v.19, no.10, pp.1587 - 1593
- Indexed
- SCIE
SCOPUS
- Journal Title
- ADVANCED FUNCTIONAL MATERIALS
- Volume
- 19
- Number
- 10
- Start Page
- 1587
- End Page
- 1593
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/41195
- DOI
- 10.1002/adfm.200801032
- ISSN
- 1616-301X
- Abstract
- An effective stacked memory concept utilizing all-oxide-based device components for future high-density nonvolatile stacked structure data storage is developed. GaInZnO (GIZO) thin-film transistors, grown at room temperature, are integrated with one-diode (CuO/InZnO)-one-resistor (NiO) (1D-1R) structure oxide storage node elements, fabricated at room temperature. The low growth temperatures and fabrication methods introduced in this paper allow the demonstration of a stackable memory array as well as integrated device characteristics. Benefits provided by low-temperature processes are demonstrated by fabrication of working devices over glass substrates. Here, the device characteristics of each individual component as well as the characteristics of a combined select transistor with a 1D-1R cell are reported. X-ray photoelectron spectroscopy analysis of a NiO resistance layer deposited by sputter and atomic layer deposition confirms the importance of metallic Ni content in NiO for bi-stable resistance switching. The GIZO transistor shows a field-effect mobility of 30 cm(2) V-1 s(-1), a V-th of +1.2V, and a drain current on/off ratio of up to 10(8), while the CuO/InZnO heterojunction oxide diode has forward current densities of 2 x 10(4) A cm(-2). Both of these materials show the performance of state-of-the-art oxide devices.
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