Fabrication and Shot Noise Characteristics of Ultra-Small Split-Gate GaAs Quantum Dots
- Authors
- Kim, Youngsang; Seo, Yohan; Jeon, Hankyung; Jeong, Heejun
- Issue Date
- Apr-2009
- Publisher
- 한국물리학회
- Keywords
- Quantum dot; Shot noise; GaAs
- Citation
- Journal of the Korean Physical Society, v.54, no.4, pp.1594 - 1598
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- Journal of the Korean Physical Society
- Volume
- 54
- Number
- 4
- Start Page
- 1594
- End Page
- 1598
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/41318
- DOI
- 10.3938/jkps.54.1594
- ISSN
- 0374-4884
- Abstract
- We demonstrate the fabrication and the electrical characterization of lithographically-defined ultra-small lateral quantum dots based on a GaAs/AlGaAs heterostructure composed of tunable split metal gates. We evaluated two quantum dots have charging energies of 4.31 and 4.99 meV, respectively, from a measurement of the Coulomb diamond plot obtained from the 2-dimensional differential conductance via gate and source-drain biases. These values axe some of the largest energy scales ever reported for a lateral split-gate type single-electron device. We also measured the shot noise from a quantum dot by using a low-frequency noise measurement technique. Elastic cotunneling, inelastic cotunneling and sequential tunneling were analyzed using conductance and shot noise measurements.
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