3차원 소자 제작을 위한 ICP Type Remote PEALD를 이용한 저온(< 300 oC) SiO2 및 SiON 박막 공정

Abstract

Direct plasma-enhanced atomic layer deposition (PEALD) are widely used for SiO2 and SiON thin film process in current semiconductor industry. However, this exhibits poor step coverage for three-dimensional device structure due directionality of plasma species as well as plasma damage on the substrate. In this study, to overcome this issue, low temperature (<300 °C) SiO2 and SiON thin film processes were studied using inductively coupled plasma (ICP) type remote PEALD with various reactant gases such as O2, H2O, N2 and NH3. It was confirmed that the interfacial properties such as fixed charge density and charge trapping behavior of thin films were considerably improved by hydrogen species in H2O and NH3 plasma compared to the films grown with O2 and N2 plasma. Furthermore, the leakage current density of the thin films was suppressed for same reason.