Prevention of condensation defects on contact patterns by improving rinse process
- Authors
- Oh, Jung Min; Han, Jeong Nam; Lee, Kun Tack; Hong, Chang Ki; Han, Woo Sung; Moon, Joo Tae; Park, Jin-Goo
- Issue Date
- Jan-2009
- Publisher
- Scitec Publications Ltd.
- Keywords
- Condensation; Crystal defect; DIW rinse; Residual gas
- Citation
- Solid State Phenomena, v.145-146, pp 151 - 154
- Pages
- 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- Solid State Phenomena
- Volume
- 145-146
- Start Page
- 151
- End Page
- 154
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/41782
- DOI
- 10.4028/www.scientific.net/SSP.145-146.151
- ISSN
- 1012-0394
1662-9779
- Abstract
- The present work reports a method to prevent the condensation defects on contact hole patterns by improving the rinsing process after a dry etching. In general, residual gases on the surface after the dry etching can be easily removed by using a DI water rinse. However, the residual gas can not be completely removed in high aspect ratio contact holes, resulting in the condensation defect. In this work, in order to completely remove the residual gas inside the contact holes, several rinse processes were employed such as a megasonic rinse, a sequential rinse and a hot temperature rinse. These proposed rinse methods were effective in eliminating the residual dry etching gases in the high aspect ratio contact holes and thus were able to remove condensation defects on contact holes. © (2009) Trans Tech Publications.
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Collections - COLLEGE OF ENGINEERING SCIENCES > DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING > 1. Journal Articles

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