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Investigation of physical cleaning process window by atomic force microscope

Authors
Kim, Tae GonWostyn, KurtBeard, TwanPark, Jin-GooMertens, Paul.W.Heyns, Marc
Issue Date
2009
Publisher
Electrochemical Society, Inc.
Citation
ECS Transactions, v.25, no.5, pp.203 - 210
Indexed
SCIE
SCOPUS
Journal Title
ECS Transactions
Volume
25
Number
5
Start Page
203
End Page
210
URI
https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/41805
DOI
10.1149/1.3202654
ISSN
1938-5862
Abstract
The pattern damage-free process window of physical cleaning was investigated by measuring the pattern collapse and particle removal forces using atomic force microscope with a quantitative lateral force calibration method. The pattern collapse forces of amorphous Si (a-Si) with 20 nm in width and 100 nm in height and TiN/black diamond (BD) II/SiCN-SiCO with 80 nm width and 210 nm height on SiO2/Si-substrates were measured. The particle removal forces of silica and PSL with 100, 300, and 500 nm diameters were measured on ozone last Si surface. The damage free cleaning process windows certainly were measured to be 600 and 3000 nN for a-Si and BDII, respectively.
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ERICA 공학대학 (DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING)
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