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Shot Noise Suppression in SiGe Resonant Interband Tunneling Diodesopen access
- Issue Date
- Dec-2008
- Publisher
- IOP Publishing Ltd
- Keywords
- SiGe; RITD; shot noise; coherent transport
- Citation
- Japanese Journal of Applied Physics, v.47, no.12, pp 8752 - 8755
- Pages
- 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- Japanese Journal of Applied Physics
- Volume
- 47
- Number
- 12
- Start Page
- 8752
- End Page
- 8755
- ISSN
- 0021-4922
1347-4065
- Abstract
- We report experimental noise studies of SiGe resonant interband tunneling diodes (RITDs) to probe the tunneling transport properties. The shot noise measurements show the signatures of coherent transport not only in the positive differential resistance (PDR) region but also in the plateau-like region on the negative differential resistance (NDR) side of the current-voltage (1-V) trace. The experimentally extracted Fano factor F < 0.5 may suggest that the coherent transport gradually becomes obvious in the NDR region. The variation of the Fano factor through the resonance process is discussed according to the recent theoretical model of coherent tunneling. [DOI: 10.1143/JJAP.47.8752]
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Related Researcher
- Jeong, Hee jun
- ERICA 첨단융합대학 (ERICA 지능정보양자공학전공)