Patterning of 32 nm 1: 1 Line and Space by Resist Reflow Process
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Joon-Min | - |
dc.contributor.author | Kim, Youngsang | - |
dc.contributor.author | Jeong, Heejun | - |
dc.contributor.author | An, Ilsin | - |
dc.contributor.author | Oh, Hye-Keun | - |
dc.date.accessioned | 2021-06-23T17:03:14Z | - |
dc.date.available | 2021-06-23T17:03:14Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2008-11 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/42072 | - |
dc.description.abstract | Producing a sub-32nm line and space pattern is one of the most important issues in semiconductor manufacturing. In particular, it is important 10 produce line and space patterns in flash memory-type devices because the unit cell is mostly composed of line and space patterns. The double patterning method is regarded as the most promising technology for producing, a sub-32 nm half-pitch node. However. the double patterning method is expensive for the production and a heavy data split is required. In order to achieve cheaper and easier patterning, we propose a resist reflow process (RRP) for producing 32 nm 1 : 1 line and space patterns. In many cases, it is easier to produce a 1 : 3 pitch line and space pattern than a 1 : 1 pitch line and space pattern ill terms of the aerial image. and RRP can transform a 1 : 3 pitch aerial image to a 1 : 1 resist image. We used a home-made RRP simulation based on the Navier-Stokes equation including the surface tension effect. Solid-E of Synopsis is used for the optical simulation, and electron-beam lithography is used for the experiment to verify the concept. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IOP Publishing Ltd | - |
dc.title | Patterning of 32 nm 1: 1 Line and Space by Resist Reflow Process | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeong, Heejun | - |
dc.contributor.affiliatedAuthor | An, Ilsin | - |
dc.contributor.affiliatedAuthor | Oh, Hye-Keun | - |
dc.identifier.doi | 10.1143/JJAP.47.8611 | - |
dc.identifier.scopusid | 2-s2.0-58749109272 | - |
dc.identifier.wosid | 000261311400078 | - |
dc.identifier.bibliographicCitation | Japanese Journal of Applied Physics, v.47, no.11, pp.8611 - 8614 | - |
dc.relation.isPartOf | Japanese Journal of Applied Physics | - |
dc.citation.title | Japanese Journal of Applied Physics | - |
dc.citation.volume | 47 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | 8611 | - |
dc.citation.endPage | 8614 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordAuthor | resist reflow process | - |
dc.subject.keywordAuthor | 32 nm line and space half-pitch | - |
dc.subject.keywordAuthor | Navier-Stokes equation | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1143/JJAP.47.8611 | - |
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