Patterning of 32 nm 1: 1 Line and Space by Resist Reflow Process
- Authors
- Park, Joon-Min; Kim, Youngsang; Jeong, Heejun; An, Ilsin; Oh, Hye-Keun
- Issue Date
- Nov-2008
- Publisher
- IOP Publishing Ltd
- Keywords
- resist reflow process; 32 nm line and space half-pitch; Navier-Stokes equation
- Citation
- Japanese Journal of Applied Physics, v.47, no.11, pp.8611 - 8614
- Indexed
- SCIE
SCOPUS
- Journal Title
- Japanese Journal of Applied Physics
- Volume
- 47
- Number
- 11
- Start Page
- 8611
- End Page
- 8614
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/42072
- DOI
- 10.1143/JJAP.47.8611
- ISSN
- 0021-4922
- Abstract
- Producing a sub-32nm line and space pattern is one of the most important issues in semiconductor manufacturing. In particular, it is important 10 produce line and space patterns in flash memory-type devices because the unit cell is mostly composed of line and space patterns. The double patterning method is regarded as the most promising technology for producing, a sub-32 nm half-pitch node. However. the double patterning method is expensive for the production and a heavy data split is required. In order to achieve cheaper and easier patterning, we propose a resist reflow process (RRP) for producing 32 nm 1 : 1 line and space patterns. In many cases, it is easier to produce a 1 : 3 pitch line and space pattern than a 1 : 1 pitch line and space pattern ill terms of the aerial image. and RRP can transform a 1 : 3 pitch aerial image to a 1 : 1 resist image. We used a home-made RRP simulation based on the Navier-Stokes equation including the surface tension effect. Solid-E of Synopsis is used for the optical simulation, and electron-beam lithography is used for the experiment to verify the concept.
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Collections - COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY > DEPARTMENT OF PHOTONICS AND NANOELECTRONICS > 1. Journal Articles
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY > DEPARTMENT OF APPLIED PHYSICS > 1. Journal Articles
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