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Noise Properties of Coherent Tunneling Processes in Resonant Interband Tunneling Diode
- Authors
- Kim, Youngsang; Kim, Dongwoo; Jeong, Heejun
- Issue Date
- Oct-2008
- Publisher
- 한국물리학회
- Keywords
- SiGe; Resonant interband tunneling diodes; Shot noise; Cross-correlation
- Citation
- Journal of the Korean Physical Society, v.53, no.4, pp.2002 - 2005
- Indexed
- SCOPUS
KCI
- Journal Title
- Journal of the Korean Physical Society
- Volume
- 53
- Number
- 4
- Start Page
- 2002
- End Page
- 2005
- ISSN
- 0374-4884
- Abstract
- Tunneling noise properties were studied with SiGe resonant interband tunneling diodes (RITDs). The classification of sub- and super-Poissonian processes was evaluated through a study of the shot noise. Shot noise suppression and the signatures of coherent transport were observed in the negative differential resistance (NDR) region by using the cross-correlation measurement technique. The temperature dependent transport behaviors are discussed.
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Related Researcher
- Jeong, Hee jun
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF APPLIED PHYSICS)