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Defect-induced degradation of rectification properties of aged Pt/n-InxZn1-xOy Schottky diodes
- Authors
- Kim, K. H.; Kang, B. S.; Lee, M. -J.; Ahn, S. -E.; Lee, C. B.; Stefanovich, G.; Xianyu, W. X.; Kim, K. -K.; Kim, J. S.; Yoo, I. K.; Park, Y.
- Issue Date
- Jun-2008
- Publisher
- AMER INST PHYSICS
- Keywords
- THIN-FILMS; ZNO; PHOTOLUMINESCENCE; GROWTH
- Citation
- APPLIED PHYSICS LETTERS, v.92, no.23, pp 1 - 4
- Pages
- 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 92
- Number
- 23
- Start Page
- 1
- End Page
- 4
- ISSN
- 0003-6951
1077-3118
- Abstract
- In this study, Pt/IZO (InxZn1-xOy) Schottky diodes were fabricated and the degradation phenomenon was investigated. The Pt/IZO Schottky diodes showed a rectifying ratio of 10(5), however, the electrical properties were degraded with aging. An increase in defect and carrier concentrations was observed from capacitance-voltage analysis and photoluminescence in the aged Pt/IZO Schottky diode. The degradation of the rectifying properties of the aged diodes originates possibly from the electron tunneling due to the increased defect concentrations. (C) 2008 American Institute of Physics.
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Related Researcher
- Kang, Bo Soo
- ERICA 첨단융합대학 (ERICA 지능정보양자공학전공)