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Interpretation of nanoscale conducting paths and their control in nickel oxide (NiO) thin films
- Authors
- Yoo, I. K.; Kang, B. S.; Park, Y. D.; Lee, M. J.; Park, Y.
- Issue Date
- May-2008
- Publisher
- AMER INST PHYSICS
- Keywords
- NONVOLATILE MEMORY; DOPED SRTIO3; HIGH-DENSITY
- Citation
- APPLIED PHYSICS LETTERS, v.92, no.20, pp 1 - 4
- Pages
- 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 92
- Number
- 20
- Start Page
- 1
- End Page
- 4
- ISSN
- 0003-6951
1077-3118
- Abstract
- The behavior of unipolar resistance switching in NiO thin film was investigated. The switching current and the switching voltage alone did not follow statistical distribution. Instead, it was observed that product of switching current and switching voltage; namely, switching power follows Poisson's distribution. An electrical manipulation-pulse train, for example-was suggested in order to minimize switching failure based on the above Poisson's distribution behavior. (C) 2008 American Institute of Physics.
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Related Researcher
- Kang, Bo Soo
- ERICA 첨단융합대학 (ERICA 지능정보양자공학전공)