Hole mobility characteristics under electrical stress for surface-channel germanium transistors with high-k gate stack
- Authors
- Yi, Jeong-Hyong; Oh, Saeroonter; Wong, H. -S. Philip
- Issue Date
- Apr-2008
- Publisher
- JAPAN SOCIETY APPLIED PHYSICS
- Keywords
- germanium; pMOSFET; high-kappa; mobility; degradation; hot carrier injection; Fowler-Nordheim (F-N) stress
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.47, no.4, pp.2544 - 2547
- Indexed
- SCIE
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS
- Volume
- 47
- Number
- 4
- Start Page
- 2544
- End Page
- 2547
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/42584
- DOI
- 10.1143/JJAP.47.2544
- ISSN
- 0021-4922
- Abstract
- This paper describes device degradation and mobility characteristics for germanium (Ge)-channel p-type metal-oxide-semiconductor field-effect transistors (pMOSFETs) with HfO(2) gate dielectrics. In order to understand the effect of trapped charges in high permittivity (high-kappa) gate dielectric and interface-trap states, we compare the hole mobility of the SiGe/SiO(2)/Si (SGOI) structure before and after applying an electrical stress. It is found that hot-carrier injection (HCI) and constant-voltage Fowler-Nordheim (F-N) stress cause mobility degradation in different mechanism. Even a negative-biased moderate F-N stress will give recovery of hole mobility. These results indicate that the device performance of a surface-channel SGOI device is easily affected by the specific trapped-charge state in high-kappa dielectrics and interface traps.
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