Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Characteristics of negative electron beam resists, ma-N2410 and ma-N2405
- Authors
- Kim, Youngsang; Jeong, Heejun
- Issue Date
- Mar-2008
- Publisher
- Elsevier BV
- Keywords
- negative resist; electron beam lithography; proximity effect; crosslink; contrast
- Citation
- Microelectronic Engineering, v.85, no.3, pp 582 - 586
- Pages
- 5
- Indexed
- SCIE
SCOPUS
- Journal Title
- Microelectronic Engineering
- Volume
- 85
- Number
- 3
- Start Page
- 582
- End Page
- 586
- ISSN
- 0167-9317
1873-5568
- Abstract
- We have characterized the electron beam lithography (EBL) properties of the new negative tone resists, ma-N2410 and ma-N2405. 2 These negative resists reacts under low electron dose values from 10 to 140 mu C/cm(2), tested using 10, 20, 28 keV electron beam. There was negligible loss of pattern height, which was attributed to the combined dose of the incident electron beam and the backscattered electrons. Experimental tests were performed under various EBL writing conditions of dose value, developing time, line-width and resist thickness. Our investigation showed that these new commercially available resists have high resolution and high contrast with non-chemical amplification, useful for micro-fabrication application. (c) 2007 Elsevier B.V. All rights reserved.
- Files in This Item
- Go to Link
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- Jeong, Hee jun
- ERICA 첨단융합대학 (ERICA 지능정보양자공학전공)