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A study on water- mark defects in copper/ low-k chemical mechanical polishing
- Authors
- Han, Ja Hyung; Koo, Ja Eung; Choi, Kyo Se; Park, Byung Lyul; Chung, Ju Hyuck; Hah, Sang Rok; Lee, Sun Yong; Kang, Young-Jae; Park, Jin-Goo
- Issue Date
- Dec-2007
- Publisher
- Scitec Publications Ltd.
- Keywords
- Contact angle; Cu/low-k CMP; Post CMP cleaning; Water mark
- Citation
- Solid State Phenomena, v.134, pp 295 - 298
- Pages
- 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- Solid State Phenomena
- Volume
- 134
- Start Page
- 295
- End Page
- 298
- ISSN
- 1012-0394
1662-9779
- Abstract
- The prevention of watermark defect after copper/low-k CMP is a critical barrier for the successful integration of sub-100 nm devices. The water-mark can act as a leakage source and cause electrical shorts. The mechanism of water-mark formation during Cu/low-k CMP is suggested and its prevention methods are proposed in this study. A suitable surfactant treatment can improve the wettability of low-k films and reduce the watermark defects very effectively. The relatively stable low-k film surface is activated during polishing and prone to adsorb surfactant molecules during cleaning, which results in the reduction of water-marks after CMP. Another solution to eliminate water-mark is the application of IPA dryer in post CMP cleaning. © (2008) Trans Tech Publications, Switzerland.
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Related Researcher
- Park, Jin Goo
- ERICA 첨단융합대학 (ERICA 신소재·반도체공학전공)