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AlSb/InAs/AlSb 양자우물 구조에서 InSb-like 계면의 전기적 특성Electrical properties of InSb-like interface in AlSb/InAs/AlSb quantum-well
- Other Titles
- Electrical properties of InSb-like interface in AlSb/InAs/AlSb quantum-well
- Issue Date
- Jun-2007
- Publisher
- 한국물리학회
- Keywords
- InAs; AlSb; 계면; TEM; Hall 효과 측정; 전자이동도; InAs; AlSb; Interface; TEM; Hall effect; Mobility
- Citation
- 새물리, v.54, no.6, pp 555 - 560
- Pages
- 6
- Indexed
- KCI
- Journal Title
- 새물리
- Volume
- 54
- Number
- 6
- Start Page
- 555
- End Page
- 560
- ISSN
- 0374-4914
2289-0041
- Abstract
- We researched the electrical and the structural properties of the InSb-like top and bottom interfaces of an InAs layer in an AlSb/InAs/AlSb quantum-well structure grown on a GaAs (001) substrate by using molecular beam epitaxy. We investigated these properties by using reflection high-energy electron diffraction, transmission election microscopy, and Hall effect measurements. We obtained an electron mobility of 20,700 cm$^2$/V$\cdot$s at room temperature by using a combination of a 30-nm InAs well and InSb-like top and bottom interfaces. In addition, according to the measurement of the temperature dependence, the InAs well interface formed an InSb-like layer.
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