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새로운 공정을 이용한 AlN 체적 탄성파 소자의 제작 및 다양한 금속 전극막에 따른 주파수 응답 특성 분석Fabrication of AlN-based FBAR Devices by Using a Novel Process and Characterization of Their Frequency Response Characteristics in terms of Various Electrode Metals
- Other Titles
- Fabrication of AlN-based FBAR Devices by Using a Novel Process and Characterization of Their Frequency Response Characteristics in terms of Various Electrode Metals
- Issue Date
- May-2007
- Publisher
- 대한전기학회
- Keywords
- Aluminum nitride (AlN); Film bulk acoustic resonator (FBAR); Membrane-structure; Metal electrode; Mass-loading effect; Frequency response.1. 서 론*學生會員 : 漢陽大學 電子電氣制御計測工學科 工學碩士; Aluminum nitride (AlN); Film bulk acoustic resonator (FBAR); Membrane-structure; Metal electrode; Mass-loading effect; Frequency response.1. 서 론*學生會員 : 漢陽大學 電子電氣制御計測工學科 工學碩士
- Citation
- 전기학회논문지ABCD, v.56, no.5, pp.915 - 920
- Indexed
- SCOPUS
KCI
- Journal Title
- 전기학회논문지ABCD
- Volume
- 56
- Number
- 5
- Start Page
- 915
- End Page
- 920
- ISSN
- 1229-2443
- Files in This Item
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Related Researcher
- PARK, JIN SEOK
- ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)