Surface preparation in CMP process; post CMP cleaning and defects

Abstract

Defects due to CMP processes should be removed for next processing step. The zeta potential of slurry particle and substrate has been considered to be a critical factor in terms of particle adhesion and removal The fundamental research such as the calculation interaction force based on DLVO theory and the measurement of adhesion forces by AFM between slurry particle and wafer surfaces can enhance the understanding of cleaning mechanism and development of cleaning process. This paper gives an overview of post CMP cleaning process from fundamentals to the current and future. © The Electrochemical Society.