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Characteristics and prevention of pattern collapse in EUV lithography
- Authors
- Chang, Wook; Kim, Eun-Jin; Kang, Young-Min; Park, Seung-Wook; Lim, Chang-Moon; Won, Ki-Tak; Kim, Jai-Soon; Oh, Hye-Keun
- Issue Date
- Mar-2007
- Keywords
- Adhesion; Deformation length; Lithography; Resist pattern collapse; Young's modulus
- Citation
- Proceedings of SPIE - The International Society for Optical Engineering, v.6517, no.PART 2, pp 1 - 7
- Pages
- 7
- Indexed
- SCIE
SCOPUS
- Journal Title
- Proceedings of SPIE - The International Society for Optical Engineering
- Volume
- 6517
- Number
- PART 2
- Start Page
- 1
- End Page
- 7
- ISSN
- 0277-786X
- Abstract
- Pattern collapse for line widths under 32 nm printed by extreme ultra-violet lithography (EUVL) is investigated by using commercial tools. Pattern collapse phenomenon occurs very often in actual process. Pattern collapse means that pattern is bending, peel-off, and break of the resist, thus it affects the production and yield of semiconductor. In this paper, we newly defined and investigated the critical aspect ratio. Pattern collapse happens if the critical aspect ratio is smaller than aspect ratio. Because EUV resist has smaller adhesive strength than currently available DUV and ArF resists, EUV resist easily collapse more easily than DUV resist does. This phenomenon is successfully modeled.
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