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Evaluation of radiative efficiency in InGaN blue-violet laser-diode structures using electroluminescence characteristics
- Authors
- Ryu, Hanyoul; Ha, Kyoungho; Chae, Junghye; Kim, Kisung; Son, Joongkon; Nam, Okhyun; Park, Yongjo; Shim, Jongin
- Issue Date
- Oct-2006
- Publisher
- American Institute of Physics
- Citation
- Applied Physics Letters, v.89, no.17, pp.1 - 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- Applied Physics Letters
- Volume
- 89
- Number
- 17
- Start Page
- 1
- End Page
- 4
- ISSN
- 0003-6951
- Abstract
- The authors analyzed radiative efficiency of InGaN laser diodes (LDs) emitting at 405 nm. Based on semiconductor rate equations, the radiative efficiency is unambiguously determined by the analysis of electroluminescence characteristics. The radiative efficiency exceeds 70% even far below threshold of similar to 3 mA at a high temperature of 80 degrees C. This highly radiative characteristic is attributed to reduced contribution of nonradiative recombination in LDs with low-dislocation-density active material. It is also found that the radiative efficiency is almost independent of threshold current, indicating that nonradiative recombination is not a major factor which determines lasing threshold in 405 nm emitting InGaN LDs having low dislocation density. (c) 2006 American Institute of Physics.
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Related Researcher
- Shim, Jong In
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF PHOTONICS AND NANOELECTRONICS)