Wafer-level transfer of thermo-piezoelectric Si3N4 cantilever array on a CMOS circuit for high density probe-based data storage
- Authors
- Kim, 1 Young-Sik; Nam,Hyo-Jin; Jang, SeongSoo; Lee, Caroline Sunyong; Jin, Won-Hyeog; Cho, 1 Il-Joo; Bu,Jong-Uk; Chang,Sun-Il; Yoon, Euisik
- Issue Date
- Jan-2006
- Citation
- Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS), v.2006, pp 922 - 925
- Pages
- 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
- Volume
- 2006
- Start Page
- 922
- End Page
- 925
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/45396
- DOI
- 10.1109/MEMSYS.2006.1627951
- ISSN
- 1084-6999
- Abstract
- In this research, a wafer-level transfer method of cantilever array on a conventional CMOS circuit has been developed for high density probe-based data storage. The transferred cantilevers were silicon nitride (Si3N 4) cantilevers integrated with poly silicon heaters and piezoelectric sensors, called thermo-piezoelectric SisN4 cantilevers. The thermo-piezoelectric Si3N4 cantilever arrays were fabricated with a conventional p-type silicon wafer instead of a SOI wafer. Furthermore, we have developed a wafer-level cantilever transfer process, which requires only one step of cantilever transfer process to integrate the CMOS circuit with the cantilevers. Using this process, we have fabricated a single thermo-piezoelectric Si3N4 cantilever, and recorded 65nm data bits on a PMMA film. And we have successfully applied this method to transfer 34×34 thermo-piezoelectric Si3N4 cantilever arrays on a CMOS wafer. Finally, We obtained reading signals from one of the cantilevers. © 2006 IEEE.
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