Mask modification for the shadow effect reduction by Rigorous coupled-wave analysis in extreme ultraviolet lithographyRigorous coupled-wave analysis를 이용한 극자외선 리소그래피에서 그림자 효과를 줄이기 위한 마스크 변형
- Other Titles
- Rigorous coupled-wave analysis를 이용한 극자외선 리소그래피에서 그림자 효과를 줄이기 위한 마스크 변형
- Authors
- 최민기; 신동수; 오혜근
- Issue Date
- Dec-2005
- Publisher
- 한양대학교 이학기술연구소
- Citation
- 이학기술연구지, v.8, pp.43 - 47
- Indexed
- OTHER
- Journal Title
- 이학기술연구지
- Volume
- 8
- Start Page
- 43
- End Page
- 47
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/45485
- ISSN
- 20059051
- Abstract
- Extreme ultraviolet lithography (EUVL) is believed to be the next generation lithography and so it is seriously under study globally. The near-field intensity on the EUVL mask is affected by the mask structure. The absorber and the buffer layer make a shadow since the light is shining on the mask at some angle to the normal on-axis. This shadow effect in the EUVL mask is an important factor that decreases the contrast of the aerial image and, as a result, causes a line width variation and a pattern shift. Among the several possible mask structures, we focused on the mask edge slope variation with a typical incident angle of 5°. We analyzed electromagnetic wave around the mask by rigorous coupled-wave analysis (RCWA) and reflectivity in the modified mask structure.
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