Cu Oxide와 Silicon Tip 사이의 나노트라이볼러지 작용

Abstract

This paper report nanotribological behavior between Si tip and Cu wafer surfaces which was treated various concentration of H2O2. This experimental approach has proven atomic level insight into Cu CMP. It has been used to study interfacial friction and adhesion force between Si tip and Cu wafer surfaces in air by atomic force microscopy (AFM). Adhesion force of Cu surfaces which was pre-cleaned in diluted HF solution was lager than Cu oxide surfaces. Adhesion force of Cu oxide surface was saturated around 7 nN. Slope of normal force vs lateral signal was increased as increasing concentration of H2O2 and it was saturated around 24. Friction force of Cu oxide was lager than Cu.