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Cu Oxide와 Silicon Tip 사이의 나노트라이볼러지 작용Nanotribological Behavior of Cu Oxide and Silicon Tip
- Other Titles
- Nanotribological Behavior of Cu Oxide and Silicon Tip
- Issue Date
- Nov-2005
- Publisher
- 한국전기전자재료학회
- Keywords
- AFM; LFM; Nanotribology; Friction; CMP
- Citation
- 한국전기전자재료학회 추계학술대회 논문집, pp.364 - 365
- Indexed
- OTHER
- Journal Title
- 한국전기전자재료학회 추계학술대회 논문집
- Start Page
- 364
- End Page
- 365
- ISSN
- 1226-7945
- Abstract
- This paper report nanotribological behavior between Si tip and Cu wafer surfaces which was treated various concentration of H2O2. This experimental approach has proven atomic level insight into Cu CMP. It has been used to study interfacial friction and adhesion force between Si tip and Cu wafer surfaces in air by atomic force microscopy (AFM). Adhesion force of Cu surfaces which was pre-cleaned in diluted HF solution was lager than Cu oxide surfaces. Adhesion force of Cu oxide surface was saturated around 7 nN. Slope of normal force vs lateral signal was increased as increasing concentration of H2O2 and it was saturated around 24. Friction force of Cu oxide was lager than Cu.
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Related Researcher
- Park, Jin Goo
- ERICA 공학대학 (DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING)