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Laser shock removal of nanoparticles from Si capping layer of extreme ultraviolet lithography masks

Authors
Lee, Sang hoKang, Young-JaePark, Jin-GooBusnaina, Ahmed ALee, Jong myungKim, Tae hoonZhang, GuojingEschbach, FlorenceRamamoorthy, Arun
Issue Date
Jul-2005
Publisher
IOP Publishing Ltd
Keywords
EUV mask; Si capping layer; EUV surface damage; particle removal; laser shock wave cleaning; UV laser cleaning
Citation
Japanese Journal of Applied Physics, v.44, no.7B, pp.5560 - 5564
Indexed
SCIE
SCOPUS
Journal Title
Japanese Journal of Applied Physics
Volume
44
Number
7B
Start Page
5560
End Page
5564
URI
https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/45840
DOI
10.1143/JJAP.44.5560
ISSN
0021-4922
Abstract
A new dry laser shock wave generated by a Nd:YAG laser was applied to remove nanosized polystyrene latex (PSL) particles on the silicon capping layer of an extreme ultraviolet lithography (EUVL) mask. UV laser was irradiated on the surface before irradiation with laser shock waves to increase the removal efficiency of the organic PSL particles. Owing to the expected damage to the surfaces, the energy of the UV laser was reduced to 8 mJ and the gap distance between the laser shock wave and the surface was increased to 10.5 mm. UV irradiation alone resulted in the removal of 50% of the particles. Exposure to the UV laser three times increased the removal efficiency to 70%. Over 95% particle removal efficiency was found when a laser shock wave was combined with the UV laser. However, the removal efficiency of the particles was below 25% by laser shock wave cleaning alone. Enhanced removal efficiency by UV laser irradiation may be attributed to the photothermal and,chemical effects of UV light on the organic PSL particles.
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ERICA 공학대학 (DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING)
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