Low-temperature gate oxynitrides formed by radical oxygen/nitrogen in a low-bias high-density plasma
- Authors
- Lee, JH; Cho, HJ; Lim, KY
- Issue Date
- Apr-2005
- Publisher
- 한국물리학회
- Keywords
- gate oxide; plasma oxynitridation; X-ray photoelectron spectroscopy
- Citation
- Journal of the Korean Physical Society, v.46, no.4, pp.1007 - 1012
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- Journal of the Korean Physical Society
- Volume
- 46
- Number
- 4
- Start Page
- 1007
- End Page
- 1012
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/46037
- ISSN
- 0374-4884
- Abstract
- Low-temperature (<= 400 degrees C) ultrathin (similar to 3 nm) gate oxynitrides have been formed, without the need to post-anneal, by using radical oxygen and nitrogen in a low-biased high-density plasma utilizing a unique slot-plane-antenna technique. X-ray photoelectron and secondary-ion mass spectroscopies reveal that the high nitrogen concentrations confined within the bulk of oxynitrides stem mostly from the bonding configuration of Si - N = O-2. Compared to plasma nitrided thermal oxides, plasma oxynitrides show a better efficiency of nitridation along with the improved charge-to-breakdown and interface characteristics, which allows further scaling down of devices.
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