Analysis on Mechanical-Strain Induced Bias-Stress Instabilities for the Flexible InGaZnO Thin Film Transistors with Different Channel Geometries
- Authors
- Jang, Hye won; Kim, Ki hwan; Oh, Saeroonter; Yoon, Sung min
- Issue Date
- Jul-2019
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Citation
- AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings, pp 1 - 4
- Pages
- 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings
- Start Page
- 1
- End Page
- 4
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/4605
- DOI
- 10.23919/AM-FPD.2019.8830599
- ISSN
- 0000-0000
- Abstract
- Channel geometry effects on the gate bias-stress instabilities of the flexible amorphous InGaZnO (IGZO) thin film transistors (TFTs) fabricated on ultra-thin polyimide films with a thickness of 1.2 μm were investigated. The flexible IGZO TFT exhibited a saturation mobility of 13.2 cm2/Vs and a subthreshold swing of 0.19 V/dec. Excellent positive bias stress (PBS) stabilities could be successfully obtained at a gate bias of 20 V even under the mechanically-strained conditions. Alternatively, at a higher bias stress of 35 V, the turn-on voltage shifts at a bending radius of 1 mm during the PBS tests were estimated for the TFTs with channel widths of 20 μm and 160 μm to be 0.7 and 4.9 V, respectively. Channel geometry-dependent PBS instability was suggested to originate from the stress concentration along the bending axis, which was verified by the evaluation results measured at various conditions and the TCAD simulations. © 2019 FTFMD.
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