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Fabrication of quantum well infrared photodetectors using chemically wet-etched grid nanostructures

Authors
Jeong, Hee jun
Issue Date
Feb-2005
Publisher
IOP Publishing Ltd
Keywords
quantum well; QWIP; wet etching; lateral quantization; GaAs
Citation
Japanese Journal of Applied Physics, v.44, no.2, pp.1123 - 1127
Indexed
SCIE
SCOPUS
Journal Title
Japanese Journal of Applied Physics
Volume
44
Number
2
Start Page
1123
End Page
1127
URI
https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/46109
DOI
10.1143/JJAP.44.1123
ISSN
0021-4922
Abstract
Quantum well infrared photodetectors were fabricated using a chemical wet etching method, defined on a GaAs/AlGaAs heterostructure. These devices utilized grid nanostructures for effective light coupling through the diffraction effect. By reducing grid widths close to the depletion of the quantum well, we observed a systematic increase in the normalized responsivity of the photodetectors, as a possible signature of the quantum size effect, with blue shift. We also achieved precise control of grid widths through wet etching that does not require an expensive processing instrument.
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