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Retention properties of fully integrated (Bi,La)(4)(Ti)(O)(3)(12) capacitors and their lateral size effects
- Authors
- Kim, DJ; Jo, JY; So, YW; Kang, BS; Noh, TW; Yoon, JG; Song, TK; Noh, KH; Lee, SS; Oh, SH; Lee, KN; Hong, SK; Park, YJ
- Issue Date
- Jan-2005
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.86, no.2, pp 1 - 4
- Pages
- 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 86
- Number
- 2
- Start Page
- 1
- End Page
- 4
- ISSN
- 0003-6951
1077-3118
- Abstract
- We investigated the retention characteristics of (Bi,La)(4)Ti3O12 (BLT) capacitors and their lateral size effects in a fully integrated device structure. Unlike the commonly used Pb(Zr,Ti)O-3 capacitors for ferroelectric random access memories (FeRAMs), which have poor opposite-state retention characteristics, BLT capacitors showed very stable characteristics in both the same- and the opposite-state retention tests. These good retention properties were closely related to the small amount of imprint in the BLT capacitors. In addition, the retention characteristics of BLT capacitors showed no practical degradation due to the size reduction, down to 0.49x0.64 mum(2), which could be used for highly integrated FeRAMs of 32 MB density. (C) 2005 American Institute of Physics.
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Related Researcher
- Kang, Bo Soo
- ERICA 첨단융합대학 (ERICA 지능정보양자공학전공)