핫 엠보싱용 점착방지막으로 사용되는 10 nm급 두께의 Teflon-like 박막의 형성 및 특성평가

Abstract

Teflon like fluorocarbon thin films have been deposited on silicon and oxide molds as an antistiction layer for the hot embossing process by an inductively coupled plasma (ICP) chemical vapor deposition (CVD) method. The process was performed at C4F8 gas flow rate of 2 sccm and 30 W of plasma power as a function of substrate temperature. The thickness of film was measured by a spectroscopic ellipsometry. These films were left in a vacuum oven of 100, 200 and 300oC for a week. The change of film thickness, contact angle and adhesion and friction force was measured before and after the thermal test. No degradation of film was observed when films were treated at 100oC. The heat treatment of films at 200 and 300oC caused the reduction of contact angles and film thickness in both silicon and oxide samples. Higher adhesion and friction forces of films were also measured on films treated at higher temperatures than 100oC. No differences on film properties were found when films were deposited on either silicon or oxide. A 100 mm silicon template with 1 to 500 μm patterns was used for the hot embossing process on 4.5 μm thick PMMA spun coated silicon wafers. The antistiction layer of 10 nm was deposited on the silicon mold. No stiction or damages were found on PMMA surfaces even after 30 times of hot embossing at 200oC and 10 kN.