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Pre-breakdown suppression in planar InP/InGaAs avalanche photodiode using deep floating guard ring
- Authors
- Hyun, Kyung-Sook; Paek, Youngmi; Kwon, Yong-Hwan; Hwang, Sungmin; Shim, Jongin; Ahn, Seong Joon
- Issue Date
- Dec-2004
- Publisher
- American Institute of Physics
- Citation
- Applied Physics Letters, v.85, no.23, pp.5547 - 5549
- Indexed
- SCIE
SCOPUS
- Journal Title
- Applied Physics Letters
- Volume
- 85
- Number
- 23
- Start Page
- 5547
- End Page
- 5549
- ISSN
- 0003-6951
- Abstract
- We propose a deep floating guard ring (DFGR) structure which effectively prevents the curvature breakdown of a central junction in a planar InGaAs/InP avalanche photodiode (APD). In order to investigate the DFGR APD performance, the dark current, photocurrent, and radial dependence of gain were measured and analyzed. In addition, the relation between breakdown voltage and multiplication layer thickness was calculated using a nonlocal history-dependent model. Reliable operation in the device center region was examined by measuring the radial gain. As a result, it has been confirmed that the DFGR is very useful for an APD with a very thin multiplication layer. (C) 2004 American Institute of Physics.
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Related Researcher
- Shim, Jong In
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF PHOTONICS AND NANOELECTRONICS)