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Anisotropic dielectric properties in epitaxial Bi3.25La0.75Ti3O12 thin films along different crystal directions
- Issue Date
- Sep-2004
- Publisher
- AMER INST PHYSICS
- Keywords
- FERROELECTRIC PROPERTIES; ELECTRICAL-PROPERTIES; BI4-XLAXTI3O12; ORIENTATION; DEPENDENCE; ELECTRODES; DEPOSITION; BI4TI3O12
- Citation
- APPLIED PHYSICS LETTERS, v.85, no.13, pp 2586 - 2588
- Pages
- 3
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 85
- Number
- 13
- Start Page
- 2586
- End Page
- 2588
- ISSN
- 0003-6951
1077-3118
- Abstract
- Epitaxial (001)-oriented Bi3.25La0.75Ti3O12 (BLT) thin films were grown by pulsed-laser deposition on (001) LaAlO3 single-crystal substrates. The dielectric properties of the BLT films are highly anisotropic along different crystal directions. The dielectric constants are 358 and 160 along [100] and [1(1) over bar 0], respectively. Dielectric nonlinearity is also detected along these crystal directions. On the other hand, a much smaller dielectric constant and no detectable dielectric nonlinearity in a field range of 0-200 kV/cm are observed for a film along [001] where c-axis oriented SrRuO3 is used as the bottom electrode. (C) American Institute of Physics.
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Related Researcher
- Kang, Bo Soo
- ERICA 첨단융합대학 (ERICA 지능정보양자공학전공)