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Fe-doped InP semi-insulating buried heterostructure for high speed and high power operations in directly modulated semiconductor laseropen access
- Authors
- Kim, Daekyong; Shim, Jong In; Jang, Doguen; Eo, Yun Hye
- Issue Date
- Jul-2004
- Publisher
- Institute of Electrical Engineers
- Citation
- Electronics Letters, v.40, no.15, pp 937 - 938
- Pages
- 2
- Indexed
- SCIE
SCOPUS
- Journal Title
- Electronics Letters
- Volume
- 40
- Number
- 15
- Start Page
- 937
- End Page
- 938
- ISSN
- 0013-5194
1350-911X
- Abstract
- A buried heterostructure based on Fe-doped InP semi-insulating layers is optimised for both high output power and large modulation bandwidth operations up to 70degreesC in a 10 Gbit/s directly modulated 1.3 mum lnGaAsP/InP distributed feedback laser. The slope efficiency of 0.19 W/A and -3 dB bandwidth of 10 GHz at 1.5 times threshold cur-rent is demonstrated experimentally.
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Related Researcher
- Shim, Jong In
- ERICA 첨단융합대학 (ERICA 반도체·디스플레이공학전공)