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Microstructural analysis of Ga1-xMnxN films grown by PEMBE
- Authors
- Kim, I.; Kim, J.; Han, S. H.
- Issue Date
- May-2004
- Publisher
- ELSEVIER SCIENCE BV
- Keywords
- magnetic semiconductors; Ga1-xMnxN; structural analysis; interfacial defect; TEM
- Citation
- JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, v.272, pp E1529 - E1531
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
- Volume
- 272
- Start Page
- E1529
- End Page
- E1531
- ISSN
- 0304-8853
1873-4766
- Abstract
- The microstructural changes of Ga1-xMnxN films grown at various substrate temperatures ( 350 - 700 degrees C) by a PEMBE system have been investigated using transmission electron microscopy. Ga1-xMnxN film with low dislocation density was grown epitaxially at 700 degrees C but dislocation density increased with the decrease of substrate temperature. Moreover, HCP and FCC structures coexisted in the vicinity of interface between GaNand Ga1-xMnxN films grown below 450 degrees C. (C) 2004 Elsevier B. V. All rights reserved.
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Related Researcher
- Kim, Jong ryoul
- ERICA 첨단융합대학 (ERICA 신소재·반도체공학전공)