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Polarization retention in Pb(Zr0.4Ti0.6)O-3 capacitors with IrO2 top electrodes

Authors
Kang, BSKim, DJJo, JYNoh, TWYoon, JGSong, TKLee, YKLee, JKShin, SPark, YS
Issue Date
Apr-2004
Publisher
AMER INST PHYSICS
Keywords
PB(ZR,TI)O-3 THIN-FILMS; CRYSTALLIZATION; TEMPERATURE; FATIGUE
Citation
APPLIED PHYSICS LETTERS, v.84, no.16, pp 3127 - 3129
Pages
3
Indexed
SCIE
SCOPUS
Journal Title
APPLIED PHYSICS LETTERS
Volume
84
Number
16
Start Page
3127
End Page
3129
URI
https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/46598
DOI
10.1063/1.1710715
ISSN
0003-6951
1077-3118
Abstract
The retention characteristics of Ir/IrO2/Pb(Zro(0.4)Ti(0.6))O-3(PZT)/Pt/IrO2 capacitors were investigated by measuring the switching and nonswitching polarizations, the switching current profiles, and the P-V hysteresis loops. The retention losses of Ir/IrO2 /PZT/Pt/IrO2 capacitors were compared with those of the Pt/PZT/Pt capacitors, and a significant improvement of an opposite-state retention was observed. It was found that the growth and the relaxation behaviors of the internal field are quite similar for both capacitors, but that the polarization backswitching becomes significantly smaller for the PZT capacitors with the IrO2 top electrodes. The difference in polarization backswitching might originate from the nature of the ferroelectric/electrode interfaces, possibly suppressing the nucleation of opposite domains at the interfaces. (C) 2004 American Institute of Physics.
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ERICA 첨단융합대학 (ERICA 지능정보양자공학전공)
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