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Preparation of TiO2 thin film by liquid sprayed mist CVD method

Authors
Kim, Bok heeLee, Jo youngChoa, Yong HoHiguchi, MMizutani, N
Issue Date
Mar-2004
Publisher
Elsevier BV
Keywords
synthesis of TiO2 thin film; ultrasonic atomizer; liquid sprayed mist CVD; 1 atmosphere
Citation
Materials Science & Engineering B: Solid-State Materials for Advanced Technology, v.107, no.3, pp 289 - 294
Pages
6
Indexed
SCIE
SCOPUS
Journal Title
Materials Science & Engineering B: Solid-State Materials for Advanced Technology
Volume
107
Number
3
Start Page
289
End Page
294
URI
https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/46609
DOI
10.1016/j.mseb.2003.12.010
ISSN
0921-5107
1873-4944
Abstract
Titanium dioxide (TiO2) thin film was synthesized on alpha-Al2O3 (0 0 0 1) substrate by liquid sprayed mist chemical vapor deposition under 1 atm. Tetraethylorthotitanate [TEOT, (C2H5O)(4)Ti] was used as starting material. The liquid source to synthesize TiO2 thin film was prepared from dissolving the starting materials in 2-methoxyethanol. The TiO2 thin film was obtained as the amorphous phase at 300 degreesC and crystalline anatase type TiO2 above 400 degreesC. The crystal of thin film was mainly oriented to (112) plane. The degree of (112) orientation, the thickness, and the surface roughness of the film were strongly dependent on the substrate temperature and deposition time. By the controlling the substrate temperature and deposition time, TiO2/alpha-Al2O3 (0 0 0 1) films with preferred orientation were successfully fabricated, and the film deposition rate was about 10 nm/min. (C) 2004 Elsevier B.V. All rights reserved.
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CHOA, YONG HO
ERICA 첨단융합대학 (ERICA 신소재·반도체공학전공)
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