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Effect of carbonization in bias-enhanced nucleation step during highly-oriented growth of diamond films on 6H-SiC(0001) substrate

Authors
Seo, Soo-hyungLee, Tae-hoonPark, JinseokSong, JoonsukOh, Myung-hwan
Issue Date
Dec-2003
Publisher
Trans Tech Publications Ltd.
Keywords
diamond films; 6H-SiC; carbonization; bias-enhanced nucleation
Citation
Materials Science Forum, v.457-460, no.1, pp 321 - 324
Pages
4
Indexed
SCIE
SCOPUS
Journal Title
Materials Science Forum
Volume
457-460
Number
1
Start Page
321
End Page
324
URI
https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/46635
DOI
10.4028/www.scientific.net/MSF.457-460.321
ISSN
0255-5476
1662-9752
Abstract
We present experimental results regarding the growth of highly-oriented diamond films on 6H-SiC substrates using a BEN (Bias-Enhanced Nucleation) process with carbonization. A microwave plasma-assisted CVD system is used. The effect of methane concentration on the carburization step is considered. For all grown films, Raman spectra, XRD patterns, and SEM morphologies are discussed in terms of the growth conditions. Micro-Raman, SEM and XRD results show that, by lowering the CH4/H-2 ratio in the carbonization step, the Raman quality factor(f(q)) increases to approximately 90.7 % while the crystal orientation is changed from random to (I I I)-orientation.
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ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)
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