Microwave performance of recessed gate Al0.2Ga0.8N/GaN HFETs fabricated using a photoelectrochemical etching technique
- Authors
- Kim, Jong wook; Lee, Jae seung; Lee, Won sang; Shin, Jin ho; Jung, Doo chan; Shin, Moo whan; Kim, Chang seok; Oh, Jae eung; Lee, Jung hee; Hahm, Sung ho
- Issue Date
- Jul-2002
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- GaN; HFET; photoelectrochemical etching; maximum frequency
- Citation
- MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, v.95, no.1, pp.73 - 76
- Indexed
- SCIE
SCOPUS
- Journal Title
- MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
- Volume
- 95
- Number
- 1
- Start Page
- 73
- End Page
- 76
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/46804
- DOI
- 10.1016/S0921-5107(02)00165-4
- ISSN
- 0921-5107
- Abstract
- This is the first report on the fabrication of AlGaN/GaN HFETs which has a recessed gate structure achieved by the photoelectrochemical etching technique. Optimal photoelectrochemical wet etching conditions were stabilized and applied for the device fabrication. The DC and large-signal RF performance of thus fabricated device is presented as well. The ohmic contacts fabricated on the n(+)-GaN layer exhibited contact resistivity of mid 10(-6) Omega cm(2) and resulted in a linear I-V characteristics during an operation of device. The maximum drain-source current density is approximately 174 mA mm(-1) (at V-GS = 1 V), and the transconductance of approximately 68 mS mm(-1) (at V-GS = -1.1 V, V-DS = 6 V). The maximum frequency is measured to be approximately 31 GHz, and an RF power of 84 mW mm(-1) at 1.8 GHz for a 1400-mum wide gate device. (C) 2002 Elsevier Science B.V. All rights reserved.
- Files in This Item
-
Go to Link
- Appears in
Collections - COLLEGE OF ENGINEERING SCIENCES > SCHOOL OF ELECTRICAL ENGINEERING > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/46804)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.