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GaInAsP/InP distributed reflector lasers consisting of deeply etched vertical gratings
- Authors
- Wiedmann, Jörg; Kim, Hyo-Chang; Ebihara, Koji; Chen, Bo; Ohta, Masataka; Tamura, Shigeo; Shim, Jong In; Arai, Shigehisa
- Issue Date
- Dec-2001
- Publisher
- IOP Publishing Ltd
- Keywords
- DBR laser; DFB laser; GaInAsP/InP; CH4/H-2-RIE; benzocyclobutene
- Citation
- Japanese Journal of Applied Physics, v.40, no.12, pp.6845 - 6851
- Indexed
- SCIE
SCOPUS
- Journal Title
- Japanese Journal of Applied Physics
- Volume
- 40
- Number
- 12
- Start Page
- 6845
- End Page
- 6851
- ISSN
- 0021-4922
- Abstract
- Deep-etching technology, which is a very simple fabrication process and requires only one lithography and one etching step without any regrowth, is applied to realize 1.5-1.55 mum wavelength GaInAsP/InP vertical grating (VG) distributed reflector (DR) lasers, which consist of a distributed feedback (DFB) region with the VG and a high-reflectivity distributed Bragg reflector (DBR) region. First, the coupling coefficient of the VG is theoretically estimated and fundamental lasing characteristics of the VG-DR lasers are investigated. Then, the fabrication process of the VG-DR lasers and the experimentally achieved fundamental lasing characteristics are given. A threshold current of 12.4 mA and a differential quantum efficiency of 42% from the front cleaved facet are achieved for a 220-mum-long and 5-mum-wide device. A submode suppression ratio (SMSR) of 33 dB at a bias current of 2.4 times the threshold is obtained.
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Related Researcher
- Shim, Jong In
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF PHOTONICS AND NANOELECTRONICS)