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GaInAsP/InP distributed reflector lasers consisting of deeply etched vertical gratings

Authors
Wiedmann, JörgKim, Hyo-ChangEbihara, KojiChen, BoOhta, MasatakaTamura, ShigeoShim, Jong InArai, Shigehisa
Issue Date
Dec-2001
Publisher
IOP Publishing Ltd
Keywords
DBR laser; DFB laser; GaInAsP/InP; CH4/H-2-RIE; benzocyclobutene
Citation
Japanese Journal of Applied Physics, v.40, no.12, pp.6845 - 6851
Indexed
SCIE
SCOPUS
Journal Title
Japanese Journal of Applied Physics
Volume
40
Number
12
Start Page
6845
End Page
6851
URI
https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/46872
DOI
10.1143/JJAP.40.6845
ISSN
0021-4922
Abstract
Deep-etching technology, which is a very simple fabrication process and requires only one lithography and one etching step without any regrowth, is applied to realize 1.5-1.55 mum wavelength GaInAsP/InP vertical grating (VG) distributed reflector (DR) lasers, which consist of a distributed feedback (DFB) region with the VG and a high-reflectivity distributed Bragg reflector (DBR) region. First, the coupling coefficient of the VG is theoretically estimated and fundamental lasing characteristics of the VG-DR lasers are investigated. Then, the fabrication process of the VG-DR lasers and the experimentally achieved fundamental lasing characteristics are given. A threshold current of 12.4 mA and a differential quantum efficiency of 42% from the front cleaved facet are achieved for a 220-mum-long and 5-mum-wide device. A submode suppression ratio (SMSR) of 33 dB at a bias current of 2.4 times the threshold is obtained.
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COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY > DEPARTMENT OF PHOTONICS AND NANOELECTRONICS > 1. Journal Articles

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