Lanthanum-substituted bismuth titanate for use in non-volatile memories
- Authors
- Park, BH; Kang, BS; Bu, SD; Noh, TW; Lee, J; Jo, W
- Issue Date
- Oct-1999
- Publisher
- NATURE PUBLISHING GROUP
- Citation
- NATURE, v.401, no.6754, pp.682 - 684
- Indexed
- SCIE
SCOPUS
- Journal Title
- NATURE
- Volume
- 401
- Number
- 6754
- Start Page
- 682
- End Page
- 684
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/46989
- DOI
- 10.1038/44352
- ISSN
- 0028-0836
- Abstract
- Non-volatile memory devices are so named because they retain information when power is interrupted; thus they are important computer components. In this context, there has been considerable recent interest(1,2) in developing non-volatile memories that use ferroelectric thin films-'ferroelectric random access memories: or FRAMs-in which information is stored in the polarization state of the ferroelectric material. To realize a practical FRAM, the thin films should satisfy the following criteria: compatibility with existing dynamic random access memory technologies, large remnant polarization (P-r) and reliable polarization-cycling characteristics. Early work focused on lead zirconate titanate (PZT) but, when films of this material were grown on metal electrodes, they generally suffered from a reduction of P-r ('fatigue') with polarity switching. Strontium bismuth tantalate (SBT) and related oxides have been proposed to overcome the fatigue problem(3), but such materials have other shortcomings, such as a high deposition temperature. Here we show that lanthanum-substituted bismuth titanate thin films provide a promising alternative for FRAM applications. The films are fatigue-free on metal electrodes, they can be deposited at temperatures of similar to 650 degrees C and their values of P-r are larger than those of the SBT films.
- Files in This Item
-
Go to Link
- Appears in
Collections - COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY > DEPARTMENT OF APPLIED PHYSICS > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.