Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
A long-wavelength infrared photodetector with self-organized InAs quantum dots embedded on HEMT-like structure
- Issue Date
- Apr-1999
- Publisher
- JAPAN J APPLIED PHYSICS
- Keywords
- self organized; InAs; quantum dot; infrared; photodetector
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.38, no.4B, pp 2442 - 2444
- Pages
- 3
- Indexed
- SCIE
SCOPUS
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
- Volume
- 38
- Number
- 4B
- Start Page
- 2442
- End Page
- 2444
- ISSN
- 0021-4922
1347-4065
- Abstract
- We fabricated a quantum dot infrared photodetector (QDIP) with 5-stacked self-organized InAs quantum dots embedded in a high electron mobility transistor-like modulation doped structure and utilize lateral electron transport. A peak response of the QDIP appeared at lambda = 10.5 mu m at T = 80 K. We also found that the device exhibits bias-dependent responsivity.
- Files in This Item
- Go to Link
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.