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THERMALLY STABLE TERNARY TITANIUM-TANTALUM SILICIDE FORMATION ON POLYCRYSTALLINE SILICON
- Authors
- CHOI, JS; PAEK, SH; HWANG, YS; KANG, SG; CHO, HC; OH, JE; SHIM, TE; LEE, SI; LEE, JK; LEE, JG
- Issue Date
- Jul-1993
- Publisher
- AMER INST PHYSICS
- Citation
- JOURNAL OF APPLIED PHYSICS, v.74, no.2, pp.1456 - 1458
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF APPLIED PHYSICS
- Volume
- 74
- Number
- 2
- Start Page
- 1456
- End Page
- 1458
- ISSN
- 0021-8979
- Abstract
- A material for thermally stable self-aligned silicide technologies has been developed using sequentially deposited Ti/Ta on polycrystalline silicon. At lower annealing temperatures below 1000-degrees-C two separate phases were found by cross-sectional transmission electron microscopy to exist in the form of bilayer TiSi2/TaSi2. The formation of a ternary phase (TiTa)Si2 has been observed at a higher temperature of 1000-degrees-C. Consequently, the ternary (TiTa) Si2 layer could be kept extremely flat, with a sheet resistance of 5 OMEGA/square, even after 1000-degrees-C, 30 min annealing. Cross-sectional transmission electron micrographs of the structure clearly reveal that no agglomeration occurs during the heat treatment.
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